GCIB nozzle assembly

ABSTRACT

A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

CROSS REFERENCE TO RELATED APPLICATION

Pursuant to 37 C.F.R. §1.78(a)(4), this application claims the benefitof and priority to prior filed Provisional Application Ser. No.62/033,253 filed Aug. 5, 2014, which is expressly incorporated herein byreference.

FIELD OF USE

The invention relates to a system and method for treating a substrateusing a gas cluster ion beam (GCIB), and more particularly to animproved beam source and associated improved GCIB for processing on asubstrate.

BACKGROUND

The use of a gas cluster ion beam (GCIB) for etching, cleaning, andsmoothing surfaces is known (see for example, U.S. Pat. No. 5,814,194,Deguchi, et al.). GCIBs have also been employed for assisting thedeposition of films from vaporized carbonaceous materials (see forexample, U.S. Pat. No. 6,416,820, Yamada, et al.)

For purposes of this discussion, gas clusters may be nano-sizedaggregates of materials that are gaseous under conditions of standardtemperature and pressure. Such gas clusters may comprise of aggregatesincluding a few to several thousand molecules, or more, that are looselybound together. The gas clusters may be ionized by electron bombardment,which permits the gas clusters to be formed into directed beams ofcontrollable energy. Such cluster ions each typically carry positivecharges given by the product of the magnitude of the electronic chargeand an integer greater than or equal to one that represents the chargestate of the cluster ion. The larger sized cluster ions are often themost useful because of their ability to carry substantial energy percluster ion, while yet having only modest energy per individualmolecule. The ion clusters disintegrate on impact with the workpiece.Each individual molecule in a particular disintegrated ion clustercarries only a small fraction of the total cluster energy. Consequently,the impact effects of large ion clusters are substantial, but arelimited to a very shallow surface region. This makes gas cluster ionseffective for a variety of surface modification processes, but withoutthe tendency to produce deeper sub-surface damage that is characteristicof conventional ion beam processing.

Conventional cluster ion sources produce cluster ions having a wide sizedistribution scaling with the number of molecules in each cluster thatmay reach several thousand molecules. Clusters of atoms can be formed bythe condensation of individual gas atoms (or molecules) during theadiabatic expansion of high-pressure gas from a nozzle into a vacuum. Askimmer with a small aperture strips divergent streams from the core ofthis expanding gas flow to produce a collimated beam of clusters.Neutral clusters of various sizes are produced and held together by weakinter-atomic forces known as Van der Waals forces. This method has beenused to produce beams of clusters from a variety of gases, such ashelium, neon, argon, krypton, xenon, nitrogen, oxygen, carbon dioxide,sulfur hexafluoride, nitric oxide, nitrous oxide, and mixtures of thesegases. Thus, there exists a need to provide methods and apparatus forimproving the beam stability in high current GCIB workpiece processingsystems.

SUMMARY

Described herein is a nozzle/skimmer module and an improved gas clusterion beam (GCIB) system for treating a substrate using a GCIB.

The nozzle/skimmer module may include an internal nozzle element andinternal skimmer cartridge assembly to control the formation of theGCIB. The nozzle/skimmer module can be pre-aligned to position the GCIBrelative to the substrate. The nozzle/skimmer module may include anozzle assembly and a skimmer assembly to control the formation of thegas clusters of the GCIB.

According to another embodiment, an improved GCIB processing system isprovided that comprises a source subsystem that includes anozzle/skimmer module, an ionization/acceleration subsystem, and aprocessing subsystem. The source subsystem can include a source chamberhaving an interior space in which the nozzle/skimmer module isconfigured, the ionization/acceleration subsystem can include anionization/acceleration chamber, and the processing subsystem caninclude a processing chamber. The improved GCIB processing systemcomprises a first gas supply subsystem, a second process gas supplysubsystem, and a first pumping subsystem coupled to the nozzle/skimmermodule.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and not as alimitation in the figures of the accompanying drawings, in which:

FIG. 1 illustrates a simplified block diagram of an exemplarynozzle/skimmer module in accordance with embodiments of the invention;

FIG. 2 shows an exemplary configuration for a test GCIB system used foraligning a nozzle/skimmer module and for improved GCIB processing inaccordance with embodiments of the invention; and

FIG. 3 shows a pictorial view of an exemplary configuration for anozzle/skimmer module in accordance with embodiments of the invention.

FIG. 4 includes a cross-section illustration of a nozzle assembly forthe GCIB processing system.

FIG. 5 includes a cross-section illustration of a nozzle component ofthe nozzle assembly for the GCIB processing system.

FIG. 6 includes a cross-section illustration of a transition regionbetween two nozzles in the nozzle component for the GCIB processingsystem.

DETAILED DESCRIPTION

The object set forth above as well as further and other objects andadvantages of the present invention are achieved by the embodiments ofthe invention described herein below.

Means for creation of and acceleration of such GCIBs are described inthe reference (U.S. Pat. No. 5,814,194) previously cited, the teachingsof which are incorporated herein by reference. Presently available ioncluster sources produce clusters ions having a wide distribution ofsizes, N, up to N of several thousand (where N=the number of moleculesin each cluster—in the case of monatomic gases like argon, an atom ofthe monatomic gas will be referred to as either an atom or a moleculeand an ionized atom of such a monatomic gas will be referred to aseither an ionized atom, or a molecular ion, or simply a monomerion—throughout this discussion).

In efforts to achieve stable high current GCIBs for workpiece processingin a GCIB processing system, developments in GCIB ionization sources,management of beam space charge, and management of workpiece charginghave all been important areas of development. U.S. Pat. No. 6,629,508 toDykstra; U.S. Pat. No. 6,646,277 to Mack et al.; and co-pending U.S.patent application Ser. No. 10/667,006, the contents of all of which areincorporated herein by reference as though set out at length herein,each describe advances in several of these areas that have resulted inthe ability to produce GCIB beams of at least several hundreds ofmicroamperes to one or more milliamperes of beam current. These beams,however, can exhibit, in some cases, instabilities that may limit theiroptimal use in industrial applications.

In a typical GCIB processing tool, the ionizer and the workpiece beingprocessed are each typically contained in separate chambers. Thisprovides for better control of system pressures. However, even withexcellent vacuum system design and differential isolation of variousregions of the apparatus, a major area of difficulty with beams carryinglarge amounts of gas is that pressures may increase throughout thebeamline. The entire gas load of the beam is released when the GCIBstrikes the target region, and some of this gas influences pressuresthroughout the GCIB processing system's vacuum chambers. Because highvoltages are often used in the formation and acceleration of GCIBs,increased beamline pressures can result in arcing, discharges, and otherbeam instabilities. As beam currents are increased, gas transport by thebeam increases and pressures throughout the beamline become moredifficult to manage. Because of the unique ability, compared to aconventional ion beam, of a GCIB to transport and release large amountsof gas throughout the beamline, pressure related beam instabilities andelectrical discharges are much more of a problem for high current GCIBsthan for conventional ion beams. In a typical GCIB ion source, neutralgas clusters in a beam are ionized by electron bombardment. The ionizerregion is generally a relatively poor vacuum region and is typically ata high electrical potential relative to surrounding structures.

In other embodiments, the GCIB system may be used to generate neutralbeams in which the gas clusters may not be ionized. This gas clusterbeam (GCB) may be used to remove residue or films from the substrate. Incertain embodiments, the GCIB may have non-ionized clusters and the GCIBprocesses disclosed herein may be modified to increase the amount ofnon-ionized clusters to for the GCB.

The present invention uses a combination of a combined source in anozzle/skimmer module, electronic positioning techniques, and isolationelements to create an improved GCIB and reduce the frequency oftransients occurring in the GCIB system.

FIG. 1 illustrates a simplified block diagram of an exemplarynozzle/skimmer module in accordance with embodiments of the invention.In the illustrated embodiment, an exemplary nozzle/skimmer module 20 isshown that can operate as a pre-aligned GCIB source.

Designing a pre-aligned nozzle/skimmer module can reduce the alignmentissues. The current design involves a fixed skimmer and adjustablenozzle, which can require readjustment after a vent cycle. Subtlechanges can occur in beam shape/profile when the nozzle manipulator isadjusted in the current design. By pre-aligning the nozzle/skimmermodule 20, adjustment issues can be reduced or possibly eliminated. Byconstructing the nozzle and the skimmer in fixed tandem configuration,the beam alignment can be simplified significantly. In addition,pre-aligning the nozzle/skimmer module 20 can decrease the maintenancetime and increase overall beam stability. The pre-aligned nozzle/skimmermodule can be aligned using a dedicated test stand that could useSchlieren optics to maximize efficient gas transport through theskimmer.

When the nozzle/skimmer module 20 is pre-aligned, it can be pre-alignedfor a first gas composition, and the first gas composition can include acondensable inert gas that can include a noble gas, i.e., He, Ne, Ar,Kr, Xe, or Rn. In various examples, the nozzle/skimmer module 20 can bepre-aligned using other gas compositions that can comprise a filmforming gas composition, an etching gas composition, a cleaning gascomposition, a smoothing gas composition, etc. Furthermore, thenozzle/skimmer module 20 can be configured to produce ionized clusterscomprising helium, neon, argon, krypton, xenon, nitrogen, oxygen,hydrogen, methane, nitrogen trifluoride, carbon dioxide, sulfurhexafluoride, nitric oxide, or nitrous oxide, or any combination of twoor more thereof.

The nozzle/skimmer module 20 can be configured and pre-aligned tooperate in a low-pressure environment and the operational pressures canrange from approximately 0.01 mTorr to approximately 100 mTorr.

The nozzle/skimmer module 20 can be constructed using a nozzle assembly30 for establishing an internal beam 28, a skimmer cartridge assembly 35for establishing an external beam 39, a support tube 21, a firstcylindrical subassembly 40, and a second cylindrical subassembly 41. Thenozzle assembly 30, the skimmer cartridge assembly 35, the support tube21, the first cylindrical subassembly 40, or the second cylindricalsubassembly 41, or any combination thereof can be fabricated usingstainless steel material. Alternatively, the nozzle assembly 30, theskimmer cartridge assembly 35, the support tube 21, the firstcylindrical subassembly 40, or the second cylindrical subassembly 41, orany combination thereof can be fabricated using hardened and/or coatedmaterial.

A first portion 21 a of the support tube 21 can be a substantiallyclosed cylindrical subassembly having a first thickness 29 a that canvary from approximately 0.5 mm to 5 mm. The second portion 21 b of thesupport tube 21 can be a substantially open frustoconical assemblyhaving a second thickness 29 b that can vary from approximately 0.5 mmto 5 mm. The first portion 21 a of the support tube 21 can be removablycoupled to the first cylindrical subassembly 40 using two or more firstmounting holes 25 and two or more first fastening devices 26, and thesecond portion 21 b of the support tube 21 can be removably coupled tothe skimmer cartridge assembly 35 using a plurality of second mountingholes 37 and second fastening devices 27. In some examples, the supporttube 21 can enclose a partially-open process space 32, and a controlledlow-pressure (vacuum) state can be established in the partially-openprocess space 32 when the nozzle/skimmer module 20 is being alignedtested and/or used.

The first portion 21 a can have a first length (l_(a)) that can varyfrom approximately 30 mm to approximately 50 mm, and the first portion21 a can have a mounting length (l_(a)) that can vary from approximately3 mm to approximately 5 mm. The second portion 21 b can have a secondlength (l_(b)) that can vary from approximately 30 mm to approximately50 mm.

The nozzle assembly 30 can be removably coupled to the secondcylindrical subassembly 41. For example, the nozzle assembly 30 can becoupled to the second cylindrical subassembly 41 using a threaded means30 a. Alternatively, other attachment means may be used. The nozzleassembly 30 can have a nozzle length (l_(n)), a nozzle angle (a_(n)),and a nozzle output aperture 31 having a nozzle diameter (d_(n)). Thenozzle length (l_(n)) (from the input to the nozzle output aperture 31)can vary from approximately 20 mm to approximately 40 mm; the nozzleangle (a_(n)) (from a centerline of the nozzle output aperture 31 to aan internal surface of the nozzle assembly 30) can vary fromapproximately 1 degree to approximately 30 degrees; and the nozzlediameter (d_(n)) can vary from approximately 2 mm to approximately 4 mm.The nozzle length (l_(n)), the nozzle angle (a_(n)), and the nozzlediameter (d_(n)) can be determined by the process chemistry, themolecule size, the flow rate, the chamber pressure, the beam size, etc.for the production process recipe.

The skimmer cartridge assembly 35 can include an inner skimmer element10 that has a frustoconical configuration. The inner skimmer element 10can extend from a skimmer input aperture 11 of inner diameter (ds₀) toan internal wall 34 a of the skimmer cartridge assembly 35 where theinner skimmer element 10 has an outer diameter (dd₀). The inner diameter(ds₀) of the skimmer input aperture 11 can vary from approximately 0.1mm to approximately 10 mm. The outer diameter (dd₀) can vary fromapproximately 0.5 mm to approximately 50 mm and is greater than theinner diameter (ds₀). A length (l₀) and an angle (a₀) can also beassociated with the inner skimmer element 10. The length (l₀) from theskimmer input aperture 11 to the internal wall 34 a can vary fromapproximately 20 mm to approximately 40 mm, and the angle (a₀) from theinternal wall 34 a can vary from approximately 100 degrees toapproximately 175 degrees. The inner diameter (ds₀), the length (l₀) andthe angle (a₀) can be dependent upon the desired width for the externalbeam 39, the gas cluster size, and the process chemistry (gases) thatthe nozzle/skimmer module 20 is designed to create. Alternatively, theinner skimmer element 10 may be configured differently.

The nozzle output aperture 31 can be separated from the skimmer inputaperture 11 by a separation distance (s₁) that can vary fromapproximately 10 mm to approximately 50 mm. Alternatively, otherseparation distances (s₁) may be used. In use, internal beam 28 (gasjet) is created from the nozzle output aperture 31 of the nozzleassembly 30 and aligned with and directed towards the skimmer inputaperture 11 in the skimmer cartridge assembly 35.

The skimmer cartridge assembly 35 can include a first outer shapingelement 12 that has a frustoconical configuration. The first outershaping element 12 can extend from the skimmer input aperture 11outwardly to a circular opening 13 adjacent to or inside of an externalwall 34 b of the skimmer cartridge assembly 35. The skimmer inputaperture 11 can have an inner diameter (ds₀) that can vary fromapproximately 0.1 mm to approximately 10 mm. The circular opening 13 canhave a first diameter (ds₁) that can vary from approximately 0.5 mm toapproximately 10 mm, and that is greater than the inner diameter (ds₀).A first length (ls₁) and a first angle (as₁) can be associated with thefirst outer shaping element 12. The first length (ls₁) from the skimmerinput aperture 11 to circular opening 13 can vary from approximately 20mm to approximately 40 mm, and the first angle (as₁) (measured from aplane parallel with the skimmer input aperture 11 to a surface of thefirst outer shaping element 12) can vary from approximately 100 degreesto approximately 175 degrees. The first diameter (ds₁), the first length(ls₁) and the first angle (as₁) can be dependent upon the desired widthfor the external beam 39, the gas cluster size, and the processchemistry (gases) that the nozzle/skimmer module 20 is designed to use.Alternatively, the first outer shaping element 12 may be configureddifferently.

The skimmer cartridge assembly 35 can include a second outer shapingelement 14 that also has a frustoconical configuration. The second outershaping element 14 can extend from the circular opening 13 outwardly toa circular opening 15 that intersects with the external wall 34 b. Thefirst diameter (ds₁) of circular opening 13 can vary from approximately0.5 mm to approximately 10 mm, and a second diameter (ds₂) of thecircular opening 15 can vary from approximately 1 mm to approximately 20mm. A second length (ls₂) and a second angle (as₂) can also beassociated with the second outer shaping element 14. The second length(ls₂) from the circular opening 13 to the circular opening 15 can varyfrom approximately 10 mm to approximately 20 mm, and the second angle(as₂) (measured from a plane parallel with the circular opening 13 to asurface of the second outer shaping element 14) can vary fromapproximately 135 degrees to approximately 175 degrees. The seconddiameter (ds₂), the second length (ls₂) and the second angle (as₂) canbe dependent upon the desired width for the external beam 39, the gascluster size, and the process chemistry (gases) that the nozzle/skimmermodule 20 is designed to use. Alternatively, the second outer shapingelement 14 may be configured differently. In other embodiments, thefirst outer shaping element 12 and/or the second outer shaping element14 may not be required. In addition, the skimmer cartridge assembly 35can comprise one or more fourth mounting holes 36 that can be configuredto removably couple the nozzle/skimmer module 20 to a chamber wall. Theexternal beam 39 of the nozzle/skimmer module 20 can be aligned in thex-direction, the y-direction, and the z-direction before nozzle/skimmermodule 20 is mounted to the chamber wall. Alternatively, one or moremechanical positioning devices (not shown) may be used.

The skimmer cartridge assembly 35 can have a first thickness (ts₁) thatcan vary from approximately 20 mm to approximately 40 mm, a secondthickness (ts₂) that can vary from approximately 10 mm to approximately20 mm, a third thickness (ts₃) that can vary from approximately 10 mm toapproximately 20 mm, and a fourth thickness (ts₄) that can vary fromapproximately 10 mm to approximately 20 mm.

The skimmer cartridge assembly 35 can have a third diameter (ds₃) thatcan vary from approximately 30 mm to approximately 50 mm, a fourthdiameter (ds₄) that can vary from approximately 50 mm to approximately60 mm, a fifth diameter (ds₅) that can vary from approximately 70 mm toapproximately 80 mm, and a sixth diameter (ds₆) that can vary fromapproximately 80 mm to approximately 90 mm, a seventh diameter (ds₇)that can vary from approximately 85 mm to approximately 95 mm, a eighthdiameter (ds₈) that can vary from approximately 90 mm to approximately100 mm.

The second cylindrical subassembly 41 can be removably coupled to thefirst cylindrical subassembly 40 using three or more third mountingholes 23 and three or more third fastening devices 24 and a first O-ring42. For example, the first O-ring 42 can be a style 2-111 from Viton,Inc. Alternatively, a different first O-ring 42 may be used. The firstcylindrical subassembly 40 can have a first thickness (t₁) that can varyfrom approximately 2 mm to approximately 5 mm and a first diameter (d₁)that can vary from approximately 75 mm to approximately 95 mm.Alternatively, the first cylindrical subassembly 40 may be configureddifferently. The second cylindrical subassembly 41 can have a secondthickness (t₂) that can vary from approximately 2 mm to approximately 5mm and a second diameter (d₂) that can vary from approximately 45 mm toapproximately 75 mm. Alternatively, the second cylindrical subassembly41 may be configured differently.

In some embodiments, a cylindrical mixing space 43 can be configured byremoving material from the first cylindrical subassembly 40 and/or fromthe second cylindrical subassembly 41. In addition, one or more secondO-rings 44 can be provided between the first cylindrical subassembly 40and the second cylindrical subassembly 41. For example, the secondO-rings 44 can be style 2-010 O-rings from Viton, Inc. Alternatively, adifferent second O-ring 44 may be used. In addition, a point of usefilter may be incorporated in the cylindrical mixing space 43 topreclude particles from obstructing the orifice of nozzle assembly 30.The cylindrical mixing space 43 can have a third thickness (t₃) that canvary from approximately 2 mm to approximately 5 mm and a third diameter(d₃) that can vary from approximately 15 mm to approximately 25 mm.Alternatively, the cylindrical mixing space 43 may be configureddifferently. A cylindrical supply element 43 a can be coupled to thecylindrical mixing space 43 and can be used to provide process gases tothe cylindrical mixing space 43. For example, the cylindrical supplyelement 43 a can be fabricate using tubing material having an insidediameter that can vary from approximately 0.2 mm to 2 mm. In addition, acylindrical coupling element 43 b can be attached to the cylindricalsupply element 43 a.

In some embodiments, the cylindrical mixing space 43 can be pre-testedwhen the first cylindrical subassembly 40 is initially coupled to thesecond cylindrical subassembly 41, and one or more pre-testedcylindrical mixing spaces 43 can be conveniently stored on-site.

In some alignment tests, an optical input signal from an optical testsource can be provided through the cylindrical supply element 43 a, andan optical output signal can be measured at the second outer shapingelement 14 of the skimmer cartridge assembly 35 using an opticalreceiver. In this manner, the alignment of the internal beam 28 can beoptically tested and verified.

The nozzle/skimmer module 20 can include a gas feed tube assembly 45that can be configured to provide process gas to the cylindrical mixingspace 43 at a controlled flow rate. The gas feed tube assembly 45 caninclude an input gas feed element 45 a, a coiled gas feed element 45 b,and an output gas feed element 45 c. The gas feed tube assembly 45 (45a, 45 b, and 45 c collectively) can have a fourth length (l₄) (fromelement 45 a to element 45 c) that can vary from approximately 1000 mmto approximately 1500 mm and an inside diameter (d₄) that can vary fromapproximately 0.5 mm to approximately 2.5 mm. Alternatively, the gasfeed tube assembly 45 and/or the coiled gas feed element 45 b may beconfigured differently. When the nozzle/skimmer module 20 is beingfabricated, the output gas feed element 45 c can be used to attach thegas feed tube assembly 45 to the cylindrical coupling element 43 b. Insome embodiments, the input gas feed element 45 a, the coiled gas feedelement 45 b, and/or the output gas feed element 45 c can be configuredto provide process gas to the cylindrical mixing space 43 at acontrolled flow rate. For example, one or more of the gas feed elements(45 a, 45 b, and 45 c) can be constructed using metal tubing.

The nozzle/skimmer module 20 can include a gas input supply assembly 47that can be coupled to the gas feed tube assembly 45. In someembodiments, the gas input supply assembly 47 can include a holdingelement 47 a, an attachment element 47 b, and an interior space portion47 c. For example, the holding element 47 a can be used to couple thegas input supply assembly 47 to the input gas feed element 45 a. Inaddition, the interior space portion 47 c can be coupled to the interiorspace of the input gas feed element 45 a. The gas input supply assembly47 can be used to removably couple the nozzle/skimmer module 20 to aninternal gas supply line when the nozzle/skimmer module 20 is mountedwithin a low-pressure processing chamber in a GCIB system as shown inFIG. 2. For example, the gas input supply assembly 47 can include athreaded means 47 d that can be used for coupling. In variousembodiments, the cylindrical mixing space 43, the gas feed tube assembly45, or the gas input supply assembly 47 can include flow controldevices, filters, and valves as required and can be used to control theflow rate of the processing gases into the nozzle assembly 30. Forexample, the flow rates can vary from approximately 10 sccm toapproximately 5000 sccm.

The feed, supply and coupling elements (45 a, 45 b, 45 c, 43 a, and 43b) can be both gas tight and non-reactive with the variety of gasesused. For example, a double walled woven stainless steel mesh with aKapton or Gore-Tex inner membrane to allow for flex without high gaspermeation can be used.

The nozzle/skimmer module 20 can have an overall length (OL) that canvary from approximately 18 cm to approximately 28 cm.

FIG. 2 shows an exemplary configuration for a GCIB system that can beused for aligning and/or testing a nozzle/skimmer module 20 before it ismounted in a production GCIB processing system in accordance withembodiments of the invention, or that can be used as a production GCIBprocessing system in which a nozzle/skimmer module 20 is mounted thathas been pre-aligned and/or tested. The GCIB system 200 comprises asource subsystem 201, an ionization/acceleration subsystem 204, and aprocessing subsystem 207. The source subsystem 201 can include a sourcechamber 202 having an interior space 203, the ionization/accelerationsubsystem 204 can include an ionization/acceleration chamber 205 havingan interior space 206, and the processing subsystem 207 can include aprocessing chamber 208 having an interior space 209.

The GCIB system 200 can include a first vacuum pumping system 216 a, asecond vacuum pumping system 216 b, and a third vacuum pumping system216 c. One or more pressure control elements 217 a can be coupled intothe source chamber 202, and one or more of the pressure control elements217 a can be coupled to the first vacuum pumping system 216 a using oneor more external vacuum hoses 218 a. Also, one or more pressure controlelements 217 b can be coupled into the ionization/acceleration chamber205, and one or more of the pressure control elements 217 b can becoupled to the second vacuum pumping system 216 b using one or moreexternal vacuum hoses 218 b. In addition, one or more pressure controlelements 217 c can be coupled into the processing chamber 208, and oneor more of the pressure control elements 217 c can be coupled to thethird vacuum pumping system 216 c using one or more external vacuumhoses 218 c.

The source chamber 202, the ionization/acceleration chamber 205, and theprocessing chamber 208 can be evacuated to suitable testing and/oroperating pressures by the first, second and third vacuum pumpingsystems 216 a, 216 b, and 216 c, respectively, when the nozzle/skimmermodule 20 is being aligned and/or tested, or when the pre-alignednozzle/skimmer module 20 is being used. In addition, the vacuum pumpingsystem 216 a can be used to establish the correct pressure in theprocess space 232 in the pre-aligned nozzle/skimmer module 20 duringoperation. Vacuum pumping systems 216 a, 216 b, and 216 c can includeturbo-molecular vacuum pumps (TMP) capable of pumping speeds up to about5000 liters per second (and greater) and a gate valve for throttling thechamber pressure. In conventional vacuum processing devices, a 1000 to2000 liter per second TMP can be employed. TMPs are useful for lowpressure processing, typically less than about 50 mTorr.

Furthermore, in some embodiments, a first chamber pressure monitoringdevice 249 a can be coupled to or configured within the source chamber202, a second chamber pressure monitoring device 249 b can be coupled toor configured within the ionization/acceleration chamber 205, and athird chamber pressure monitoring device 249 c can be coupled to orconfigured within the processing chamber 208. Alternatively, a chamberpressure monitoring device may be coupled to the nozzle/skimmer module20. For example, the pressure-monitoring device can be a capacitancemanometer or ionization gauge. Controller 290 can be coupled to thevacuum pumping systems (216 a, 216 b, and 216 c) and to the chamberpressure monitoring devices (249 a, 249 b, and 249 c) through signal bus291. In addition, the controller 290 can monitor and/or control thevacuum pumping systems (216 a, 216 b, and 216 c) and the chamberpressure monitoring devices (249 a, 249 b, and 249 c) when thenozzle/skimmer module 20 is being aligned and/or tested, or when acorrectly operating pre-aligned nozzle/skimmer module 20 is being used.

The nozzle/skimmer module 20, as described above with reference to FIG.1, can be positioned in the source subsystem 201 of a test system (e.g.,system 200) after the nozzle/skimmer module 20 is constructed. After thenozzle/skimmer module 20 is pre-aligned and/or tested, it can then bepositioned in the source subsystem 201 of a production processing system(e.g., system 200). The skimmer cartridge assembly 35 can be used toremovably couple the nozzle/skimmer module 20 to an interior wall 238 ofthe source chamber 202 using the plurality of fourth mounting holes 36and a plurality of fourth fastening devices 222, as shown in FIG. 2.Alternatively, the skimmer cartridge assembly 35 may be used toremovably couple the nozzle/skimmer module 20 to an exterior wall of thesource chamber 202 (not shown). The skimmer cartridge assembly 35 can bealigned in the x-direction, the y-direction, and the z-direction beforeit is mounted within the interior space 203 of the source chamber 202.Alternatively, one or more positioning devices (not shown) may be usedwhen mounting the nozzle/skimmer module 20.

As explained above with reference to FIG. 1, the nozzle output aperture31 can be separated from the skimmer input aperture 11 by a separationdistance (s₁), which can vary, for example, from approximately 10 mm toapproximately 50 mm. The correct separation distance (s₁) can beestablished when the nozzle/skimmer module 20 is tested and/or aligned.When the separation distance (s₁) is not correct, the nozzle assembly30, the support tube 21 and/or the skimmer cartridge assembly 35 can berepositioned or re-manufactured. The separation distance (s₁) can bedependent upon the process chemistry (gases) that the nozzle/skimmermodule 20 is designed to use in a production process system.

When the nozzle/skimmer module 20 is aligned and/or tested, the skimmercartridge assembly 35 can be aligned with the nozzle assembly 30 suchthat the internal beam 28 established from nozzle output aperture 31 isaligned with and directed towards the skimmer input aperture 11 in theskimmer cartridge assembly 35. In some embodiments, the nozzle assembly30 can be pre-tested and/or pre-aligned before it is coupled to thesecond cylindrical subassembly 41. Further, one or more pre-testedand/or pre-aligned nozzle assemblies 30 can be configured differently,and the differences can be determined by the process chemistry, themolecule size, the flow rate, the chamber pressure, the cluster size,the beam size, etc. In addition, one or more pre-tested and/orpre-aligned nozzle assemblies 30 can be stored on-site to facilitate theuse of other process recipes.

When the internal beam 28 is aligned correctly, the first portion 21 aof the support tube 21 can be rigidly and removably coupled to the firstcylindrical subassembly 40 using two or more first mounting holes 25 andtwo or more first fastening devices 26, and the second portion 21 b ofthe support tube 21 can be rigidly and removably coupled to the skimmercartridge assembly 35 using the second mounting holes 37 and secondfastening devices 27 to maintain the correct alignment.

In some embodiments, as discussed above, the cylindrical mixing space 43can be pre-tested when the first cylindrical subassembly 40 is initiallycoupled to the second cylindrical subassembly 41, and one or morepre-tested cylindrical mixing spaces 43 can be conveniently storedon-site. For example, during alignment and/or testing of the cylindricalmixing space 43, one or more controlled test gas sources can provide oneor more test gases at one or more different flow rates to thecylindrical mixing space 43 through the cylindrical supply element 43 aand the cylindrical coupling element 43 b.

As discussed above, the nozzle/skimmer module 20 can include a gas feedtube assembly 45 that can be configured to provide process gas to thecylindrical mixing space 43 at a controlled flow rate. A gas inputsupply assembly 47 can be coupled to the gas feed tube assembly 45. Insome embodiments, the gas input supply assembly 47 can be used toremovably couple the nozzle/skimmer module 20 to a gas output port 233 aattached to a gas supply subassembly 233. For example, threaded means 47d can be used to attach the attachment element 47 b to the gas outputport 233 a. Alternatively, a “snap-connect” means can be used to attachthe attachment element 47 b to the gas output port 233 a. In addition,the interior space portion 47 c can be coupled to the interior space ofthe gas output port 233 a. In addition, the gas output port 233 a can beattached to the wall of the source chamber 202.

In various embodiments, the gas supply subassembly 233 and/or the gasoutput port 233 a can include flow control devices, filters, and valvesas required. The gas supply subassembly 233 and/or the gas output port233 a can be used to control the flow rate of the processing gases intothe nozzle/skimmer module 20. For example, the flow rates can vary fromapproximately 10 sccm to approximately 3000 sccm.

When the nozzle/skimmer module 20 is aligned and/or tested, thenozzle/skimmer module 20 can produce a test external beam 39 that can bedirected into the interior space 206 in the ionization/accelerationchamber 205. The pre-aligned nozzle/skimmer module 20 can then beconfigured in a production process GCIB system 200 that can provideimproved GCIB processes for a workpiece 281, which may be asemiconductor wafer, a thin film on a substrate, or other workpiece thatrequires improved GCIB processing. When the pre-aligned nozzle/skimmermodule 20 is used in the GCIB system 200, the pre-aligned nozzle/skimmermodule 20 can produce a pre-aligned external beam 39 that can bedirected into the interior space 206 in the ionization/accelerationchamber 205 to process the workpiece 281.

Some GCIB systems 200 can include a first gas supply subsystem 250, anda second gas supply subsystem 253. For example, the first gas supplysubsystem 250 can be coupled to the gas supply subassembly 233 using oneor more of the external gas supply lines 252 and one or more first flowcontrol elements 251, and the second gas supply subsystem 253 can becoupled to the gas supply subassembly 233 using one or more of theexternal gas supply lines 252 and one or more second flow controlelements 254. A first gas composition stored in the first gas supplysubsystem 250 and/or a second gas composition stored in the second gassupply subsystem 253 can be used when the nozzle/skimmer module 20 isbeing aligned and/or tested or when it is being used in a productionprocess.

In some examples, the nozzle/skimmer module 20 can be configured to usea first gas composition, and the first gas composition can include acondensable inert gas that can include a noble gas, i.e., He, Ne, Ar,Kr, Xe, or Rn. In other examples, the nozzle/skimmer module 20 can beconfigured to use a second gas composition that can comprise a filmforming gas composition, an etching gas composition, a cleaning gascomposition, a smoothing gas composition, etc. Furthermore, the firstgas supply subsystem 250 and the second gas supply subsystem 253 may beutilized either alone or in combination with one another when thenozzle/skimmer module 20 is configured to produce ionized clusterscomprising helium, neon, argon, krypton, xenon, nitrogen, oxygen,hydrogen, methane, nitrogen trifluoride, carbon dioxide, sulfurhexafluoride, nitric oxide, or nitrous oxide, or any combination of twoor more thereof.

During alignment, testing, and/or GCIB processing, the first gascomposition and/or the second gas composition may be provided to thenozzle/skimmer module 20 at a high pressure to produce ionized clusterscomprising helium, neon, argon, krypton, xenon, nitrogen, oxygen,hydrogen, methane, nitrogen trifluoride, carbon dioxide, sulfurhexafluoride, nitric oxide, or nitrous oxide, or any combination of twoor more thereof. For example, the first gas composition and/or thesecond gas composition can be introduced into the cylindrical mixingspace 43 and can be ejected into the substantially lower pressure vacuumin the partially-open process space 32 inside the support tube 21through the nozzle assembly 30. When the high-pressure condensable gasfrom the nozzle assembly 30 expands into the lower pressure region ofthe partially-open process space 32, the gas molecule velocities canapproach supersonic speeds and an internal beam 28 (gas jet) is createdbetween the nozzle output aperture 31 of the nozzle assembly 30 and theskimmer input aperture 11 of the inner skimmer element 10, and anexternal beam 39 of clusters can emanate from the first outer shapingelement 12 and the second outer shaping element 14 in the nozzle/skimmermodule 20.

The flow elements in gas feed tube assembly 45, gas input supplyassembly 47, and cylindrical supply and coupling elements 43 a, 43 b canbe both gas tight and non-reactive with the variety of gases used. Forexample, a double walled woven stainless steel mesh with a Kapton orGore-Tex inner membrane to allow for flex without high gas permeationcan be used.

The source chamber 202 can be a closed structure that is configured tosustain a low pressure therein. One or more of the walls of the sourcechamber 202 can include a non-reactive metal, such as stainless steel orcoated aluminum.

The source subsystem 201 can include one or more pressure controlelements 217 a coupled into the source chamber 202. One or more of thepressure control elements 217 a can be coupled to the first vacuumpumping system 216 a using one or more external vacuum hoses 218 a. Inalternate embodiments, one or more internal vacuum hoses (not shown) maybe coupled to the support tube 21 and may be used to control thepressure in the interior partially-open process space 32 of the supporttube 21.

A supersonic gas jet is generated as an internal beam 28 in thenozzle/skimmer module 20. Cooling, which results from the expansion inthe jet, causes a portion of the supersonic gas jet to condense intoclusters, each consisting of from several to several thousand weaklybound atoms or molecules. The skimmer cartridge assembly 35 in thenozzle/skimmer module 20 partially separates the gas molecules that havenot condensed into a cluster jet from the cluster jet so as to minimizepressure in the downstream regions where such higher pressures would bedetrimental (e.g., ionizer 255, high voltage electrodes 265, andprocessing chamber 208). Suitable condensable processing gases caninclude, but are not necessarily limited to argon, nitrogen, carbondioxide, oxygen, and other gases. The skimmer input aperture 11, thefirst outer shaping element 12, and the second outer shaping element 14are preferably conical and form an external beam 39 that issubstantially cylindrical.

During some alignment and/or testing procedures or processingprocedures, the external beam 39 from the nozzle/skimmer module 20 cancontain gas clusters, and the external beam 39 of clusters can be sentthrough an electron suppressor apparatus 260. Alternatively, an electronsuppressor apparatus 260 may not be required or may be used at adifferent location during some alignment, testing, and/or processingprocedures. The electron suppressor apparatus 260 can comprise anelectrically conductive electron suppressor electrode 261 at a firstpotential, a secondary electrode 262 at a second potential, and asuppressor electrode bias power supply 264. Suppressor electrode biaspower supply 264 provides a glitch suppression voltage V_(GS) and theV_(GS) test range can vary from about 1 kV to about 5 kV. The electronsuppressor electrode 261 can be negatively biased with respect tosecondary electrode 262 and the nozzle/skimmer module 20, and thesecondary electrode 262 and nozzle/skimmer module 20 can be atapproximately the same potential during testing and/or processing.Electron suppressor electrode 261 and secondary electrode 262 each havea coaxially-aligned aperture for transmission of the external beam 39(neutral supersonic gas jet). The negatively biased electron suppressorapparatus 260 provides an electric field in the region between thenozzle/skimmer module 20 output (circular openings 13, 15) and theelectron suppressor electrode 261 that causes any secondary electronsejected from the nozzle/skimmer module 20 output region to followtrajectories that return them toward the output of nozzle/skimmer module20 or electrically connected adjacent regions and prevents them frombeing accelerated and producing ionization in the external beam 39(supersonic gas jet) in the region between nozzle/skimmer module 20 andthe ionizer 255. Both the extension tube 257 and electron suppressorapparatus 260 contribute to reduction of beam glitches due to dischargesand arcing in the region between the output of the nozzle/skimmer module20 and the ionizer 255. Used in combination as shown in FIG. 2, they aresignificantly more effective than the sum of their independentcontributions. The combination reduces to a negligible level theskimmer-ionizer discharge as a source of beam glitching and has enabledproduction of stable GCIB beam currents on the order of 500 to 1000microamperes with glitch rates from all causes on the order of one perhour. This is an improvement of from 10 times to 100 times overpreviously obtained results from conventional systems. Alternatively,magnetic electron suppressors and other electron gates may be used.

During some alignment, testing, and/or processing procedures, thesupersonic gas clusters in the external beam 39 that exit from theelectron suppressor apparatus 260 can be ionized in an ionizer 255,which preferably has a substantially cylindrical geometry coaxiallyaligned with the supersonic clusters in the external beam 39. Theionizer 255 can be an electron impact ionizer that producesthermoelectrons from one or more ionizer filaments 258 and acceleratesand directs the electrons causing them to collide with the supersonicgas clusters in the external beam 39, as the jet (beam) passes throughthe ionizer 255. The electron impact ejects electrons from the clusters,causing a portion the clusters to become positively ionized. A set ofsuitably biased high voltage electrodes 265 extracts the cluster ionsfrom the ionizer, forming a beam, then accelerates them to a desiredenergy (typically from 1 keV to several tens of keV) and focuses them toform a GCIB 263.

During various exemplary tests and processes, a filament power supply267 can provide filament voltage V_(F) to heat the ionizer filament 258.An anode power supply 266 can provide anode voltage V_(A) to acceleratethermoelectrons emitted from the ionizer filament 258 to cause them toirradiate the cluster-containing external beam 39 to produce ions. Atest extraction power supply 268 can provide extraction voltage V_(E) tobias a high voltage electrode to extract ions from the ionizing regionof ionizer 255 and to form a GCIB 263. An accelerator power supply 269can provide acceleration voltage V_(ACC) to bias a high voltageelectrode with respect to the ionizer 255 so as to result in a totalGCIB acceleration equal to V_(ACC). One or more lens power supplies (272and 274) can be provided to bias high voltage electrodes with focusingvoltages (V_(L1) and V_(L2)) to create a GCIB 263 that can be shapedand/or focused.

The GCIB system 200 can include an X-scan controller 282 that provideslinear motion of the workpiece holder 280 in the direction of the X-scanmotion 283 (into and out of the plane of the paper). A Y-scan controller284 provides linear motion of the workpiece holder 280 in the directionof Y-scan motion 285, which is typically orthogonal to the X-scan motion283. During some alignment, testing, and/or processing procedures, thecombination of X-scanning and Y-scanning motions can move a workpiece281, held by the workpiece holder 280, in a raster-like scanning motionthrough the GCIB 263. When the GCIB system 200 is operating correctly,the GCIB 263 can provide a uniform irradiation of a surface of theworkpiece 281 thereby causing a uniform processing of the workpiece 281.A controller 290, which may be a microcomputer based controller connectsto the X-scan controller 282 and the Y-scan controller 284 throughsignal bus 291 and controls the X-scan controller 282 and the Y-scancontroller 284 so as to place the workpiece 281 into or out of the GCIB263 and to scan the workpiece 281 uniformly relative to the GCIB 263 toachieve uniform processing of the workpiece 281 by the GCIB 263.

During some test and/or processing procedures, the workpiece holder 280can position the workpiece 281 at an angle with respect to the axis ofthe GCIB 263 so that the GCIB 263 has a beam incidence angle 286 withrespect to the surface of the workpiece 281. When the GCIB system 200 isoperating correctly, the beam incidence angle 286 may be approximately90 degrees. During Y-scan testing, the workpiece 281 can be held byworkpiece holder 280 and can be moved from the position shown to thealternate position “A” indicated by the designators 281A and 280Arespectively. When a scanning procedure is performed correctly, theworkpiece 281 can be completely scanned through the GCIB 263, and in thetwo extreme positions, the workpiece 281 can be moved completely out ofthe path of the GCIB 263 (over-scanned). In addition, similar scanningand/or over-scanning can be performed in the orthogonal X-scan motion283 direction (in and out of the plane of the paper). During some testcases, the nozzle/skimmer module 20 can be adjusted and/or re-alignedwhen the test scanning procedure fails.

The workpiece 281 can be affixed to the workpiece holder 280 using aclamping system (not shown), such as a mechanical clamping system or anelectrical clamping system (e.g., an electrostatic clamping system).Furthermore, workpiece holder 280 may include a heating system (notshown) or a cooling system (not shown) that is configured to adjustand/or control the temperature of workpiece holder 280 and workpiece281.

A beam current sensor 288 can be positioned beyond the workpiece holder280 in the path of the GCIB 263 and can be used to intercept a sample ofthe GCIB 263 when the workpiece holder 280 is scanned out of the path ofthe GCIB 263. The beam current sensor 288 can be a faraday cup or thelike, and can be closed except for a beam-entry opening, and can beattached to a wall of the processing chamber 208 using an electricallyinsulating mount 289. Alternatively, one or more sensing devices may becoupled to the workpiece holder 280.

The GCIB 263 can impact the workpiece 281 at a projected impact regionon a surface of the workpiece 281. During X-Y testing and processing,the workpiece holder 280 can position each portion of a surface of theworkpiece 281 in the path of GCIB 263 so that every region of thesurface of the workpiece 281 can be processed by the GCIB 263. TheX-scan and Y-scan controllers 282, 284 can be used to control theposition and velocity of workpiece holder 280 in the X-axis and theY-axis directions. The X-scan and Y-scan controllers 282, 284 canreceive control signals from controller 290 through signal bus 291.During various tests and processes, the workpiece holder 280 can bemoved in a continuous motion or in a stepwise motion to positiondifferent regions of the workpiece 281 within the GCIB 263. In oneembodiment, the workpiece holder 280 can be controlled by the controller290 to scan, with programmable velocity, any portion of the workpiece281 through the GCIB 263.

In some exemplary test or processing sequences, one or more of thesurface of the workpiece holder 280 can be constructed to beelectrically conductive and can be connected to a dosimetry processoroperated by controller 290. An electrically insulating layer (not shown)of workpiece holder 280 may be used to isolate the workpiece 281 andsubstrate holding surface from the other portions of the workpieceholder 280. Electrical charge induced in the workpiece 281 by impingingthe GCIB 263 may be conducted through the workpiece 281 and theworkpiece holder 280 surface, and a signal can be coupled through theworkpiece holder 280 to controller 290 for dosimetry measurement.Dosimetry measurement has integrating means for integrating the GCIBcurrent to determine a GCIB processing dose. Under certaincircumstances, a target-neutralizing source (not shown) of electrons,sometimes referred to as electron flood, may be used to neutralize theGCIB 263. In such case, a Faraday cup may be used to assure accuratedosimetry despite the added source of electrical charge. Duringprocessing of the workpiece 281, the dose rate can be communicated tothe controller 290, and the controller 290 can confirm that the GCIBbeam flux is correct or to detect variations in the GCIB beam flux.

Controller 290 can also receive the sampled beam current collected bythe beam current sensor 288 via signal bus 291. The controller 290 canmonitor the position of the GCIB 263, can control the GCIB dose receivedby the workpiece 281, and can remove the workpiece 281 from the GCIB 263when a predetermined desired dose has been delivered to the workpiece281. Alternatively, an internal controller may be used.

The GCIB system 200 as shown in FIG. 2 includes mechanisms permittingincreased GCIB currents while reducing or minimizing “glitches.” Atubular conductor, such as, for example, extension tube 257, is shown asan integral part of the ionizer 255 disposed at the entrance aperture256 of the ionizer 255; however, the extension tube 257 need not be sointegrally connected. The extension tube 257 is electrically conductiveand electrically attached to the ionizer 255 and is thus at the ionizerpotential. Other configurations, which achieve approximately the samepotential relationship between the extension tube 257 and the ionizer255, may be employed. The ionizer entrance aperture 256 diameter canvary from approximately 2 cm to approximately 4 cm. Extension tube 257has an inner diameter that can vary from approximately 2 cm toapproximately 4 cm. The length of the extension tube 257 can vary fromapproximately 2 cm to approximately 8 cm. The walls of extension tube257 are electrically conductive, preferably metallic, and may beperforated or configured as a plurality of connected, coaxial rings ormade of screen material to improve gas conductance. Extension tube 257shields the interior of the ionizer 255 from external electric fields,reducing the likelihood that a positive ion formed near the entranceaperture 256 of the ionizer 255 will be extracted backwards out of theionizer 255 and accelerated toward the output end of the nozzle/skimmermodule 20. The ionizer exit aperture 259 diameter can vary fromapproximately 2 cm to approximately 4 cm.

The GCIB system 200 may further include an in-situ metrology system. Forexample, the in-situ metrology system may include an optical diagnosticsystem having an optical transmitter 270 and optical receiver 275configured to illuminate the workpiece 281 with an incident opticalsignal 271 and to receive a scattered optical signal 276 from theworkpiece 281, respectively. The optical diagnostic system comprisesoptical windows to permit the passage of the incident optical signal 271and the scattered optical signal 276 into and out of the processingchamber 208. Furthermore, the optical transmitter 270 and the opticalreceiver 275 may comprise transmitting and receiving optics,respectively. The optical transmitter 270 can be coupled to andcommunicate with the controller 290. The optical receiver 275 returnsmeasurement signals to the controller 290. For example, the in-situmetrology system may be configured to monitor the progress of the GCIBprocessing.

Controller 290 comprises one or more microprocessors, memory, and I/Oports capable of generating control voltages sufficient to communicateand activate inputs to the GCIB system 200 as well as monitor outputsfrom the GCIB system 200. Moreover, controller 290 can be coupled to andcan exchange information with vacuum pumping systems 216 a, 216 b, and216 c, first gas supply subsystem 250, second gas supply subsystem 253,nozzle/skimmer module 20, gas supply subassembly 233, suppressorelectrode bias power supply 264, anode power supply 266, filament powersupply 267, extraction power supply 268, accelerator power supply 269,lens power supplies 272 and 274, the optical transmitter 270, theoptical receiver 275, X-scan and Y-scan controllers 282 and 284, andbeam current sensor 288. For example, a program stored in the memory canbe utilized to activate the inputs to the aforementioned components ofthe GCIB system 200 according to a process recipe in order to perform atest or production GCIB process on a workpiece 281.

In some test embodiments, a beam filter 295 can be positioned in theionization/acceleration chamber 205 and can be used to eliminatemonomers or monomers and light ionized clusters from the GCIB 263 tofurther define the GCIB 263 before it enters the processing chamber 208.In addition, a beam gate 296 can be disposed in the path of GCIB 263 inthe ionization/acceleration chamber 205. For example, the beam gate 296can have an open state in which the GCIB 263 is permitted to pass fromthe ionization/acceleration chamber 205 to the processing subsystem 207and a closed state in which the GCIB 263 is blocked from entering theprocessing subsystem 207. The controller 290 can be coupled to the beamfilter 295 and the beam gate 296, and the controller 290 can monitor andcontrol the beam filter 295 and the beam gate 296 during testing orprocessing.

Alternatively, an adjustable aperture may be incorporated with the beamfilter 295 or included as a separate device (not shown), to throttle orvariably block a portion of a GCIB flux thereby reducing the GCIB beamcurrent to a desired value. The adjustable aperture may be employedalone or with other devices and methods known to one skilled in the artto reduce the GCIB flux to a very small value, including varying the gasflow from a GCIB source supply; modulating the ionizer by either varyinga filament voltage V_(F) or varying an anode voltage V_(A); ormodulating the lens focus by varying lens voltages V_(L1) and/or V_(L2).

During some procedures, when an ionized gas cluster ion impinge on asurface of a workpiece 281, a shallow impact crater can be formed with awidth of approximately 20 nm and a depth of approximately 10 nm, butless than approximately 25 nm. When imaged using a nano-scale imagingdevice such as Atomic Force Microscopy (AFM), the impact craters have anappearance similar to indentations. After impact, the inert species fromthe gas cluster ion vaporizes, or escapes the surface of the workpiece281 as a gas and is exhausted from the processing subsystem 207 andprocessing chamber 208 by the vacuum pumping system 216 c.

FIG. 3 shows a pictorial view of an exemplary configuration for anozzle/skimmer module in accordance with embodiments of the invention.In the illustrated embodiment, a nozzle/skimmer module 400 is shown thatis similar to nozzle/skimmer module 20 of FIG. 1, having like partsdesignated by like reference numerals. Alternatively, the nozzle/skimmermodule may be configured differently.

FIG. 4 includes a cross-section illustration of a nozzle assembly 400for the GCIB processing system shown in FIG. 2. In contrast to thesingle beam nozzle shown in FIG. 1, the nozzle assembly 400 may be usedto generate two or more GCIBs that may be used to treat the substrate orworkpiece 281. Two or more nozzles may be placed adjacent to each otherto generate their own corresponding GCIB. Accordingly, a skimmer 402 maybe designed to collimate the gas clusters being emitted from the two ormore nozzles. The distance between the two or more nozzles and theskimmer may be dictated or controlled by the length of the support tube404 that is coupled to one or more portions of the nozzle assembly 400.In certain instances, the two or more nozzles may be integrated into acommon assembly or piece part or combination of piece parts that may becoupled together. In the FIG. 4 embodiment, the gas manifold 406 may bedesigned to provide a gas line 408 to each of the nozzles. The gasmanifold may enable three or more gases to be introduced to the nozzleassembly. The incoming pressure for the one or more gases may range from1 atm to 100 atm and have a temperature between −100° C. and 110° C.

In one embodiment, the two or more nozzles may be integrated intocombination piece part that may include a first nozzle component 410that may be adjacent to or aligned with a second nozzle component 412,the details of which will be described in greater detail in thedescription of FIGS. 5 and 6. However, FIG. 4 does illustrate that thealignment of the conical cavities of the first nozzle component 410 andthe second nozzle component 412 such that th conical cavities may becentered along their respective beam centerlines (e.g., beam #1centerline 414 and beam centerline 416). In this way, each of the nozzlecomponents may contribute to the formation of their respective GCIBbased on the alignment of conical cavities that may have the same orsubstantially similar half angle.

FIG. 5 includes a cross-section illustration of a nozzle device 500 thatmay include the first nozzle component 410 and the second nozzlecomponent 412. The nozzle device 500 may include an orifice 502 throughwhich gas that forms the GCIB may be projected through at a highpressure difference between the gas line 408 and the first conicalcavity 506. The diameter of the orifice 502 may vary between 25 μm and500 μm. In one specific embodiment, the orifice 502 may be about 80 μm.The orifice 502 may be proximate to a first entry surface 504 which mayinclude a substantially flat surface that may be flush with the gasmanifold 406. The orifice 502 may have a polished surface or minimalsurface roughness that may encourage clustering. The surface roughnessmay range between 0.1 μm and 0.5 μm with a specific embodiment of about0.2 μm.

Once through the orifice 502, the gas may be projected through the firstconical cavity 506 towards a second conical cavity 508 in the secondnozzle component 412. The length of the first conical cavity 506 mayrange between 20 mm and 60 mm and a length of the second conical cavity508 may vary based on a ratio of the length of the first conical cavity506. The ratio may vary from 0.40 to 0.99.

The first conical cavity 506 may also have the same or similar halfangle 510 that may be measured from the centerline 414. The half angle510 may range from about 1.5 to about 30.0 degrees. In this way, theedges of the first conical cavity 506 and the second conical cavity 510may form a line with the same or similar slope. In one specificembodiment, the half angle may be about 6 degrees.

In the FIG. 5 embodiment, the exit diameter of the first conical cavity506 at the first exit surface 514 may be less than the entry diameter ofthe second conical cavity 508. In this way, the largest diameter of thefirst conical cavity 506 may be less than any diameter in the secondconical cavity 508 measured from any point along the centerline 414. Forexample, the exit diameter may vary from 50% to almost 100% of the entrydiameter, such that a step height of no more than 1 mm may exist betweenthe first conical cavity 506 and the second conical cavity 508. Incertain embodiments, a flat transition region 512 may be disposedbetween the first conical cavity 506 and the second conical cavity 508.The flat transition region 512 may include the second entry surface 516that may be opposite the first exit surface 514 of the first nozzlecomponent 410. The first exit surface 514 may also be referred to as theintermediate exit surface that may be disposed between the first entrysurface 504 and the second exit surface 518 of the second nozzlecomponent 412.

In one embodiment, the second nozzle component 412 may be called are-entrant cavity component. In this embodiment, the second nozzlecomponent 412 may include a cavity that houses the first nozzlecomponent 410, such that the first nozzle component 410 may be securedor held in position by the second nozzle component 410. The first nozzlecomponent 410 may slide in to the re-entrant cavity from the first entrysurface 504. The re-entrant cavity, in conjunction with the first nozzlecomponent 410, may be designed to align the first conical cavity 506 andthe second conical cavity 508 of the re-entrant cavity component.

In the FIG. 5 embodiment, the first nozzle component 410 may be designedto house or accommodate sealing members 520 that maintain a fluidic sealbetween the gas line 408, the gas manifold 406 and the first nozzlecomponent 410. In this instance, the sealing member 520 may maintain ahigh pressure differential between the gas line 410 and the firstconical cavity 506. The sealing member 520 may include, but is notlimited to a sealer, an O-ring, or an elastomer.

In one embodiment, the first nozzle component 410 may be made of aceramic material and the second nozzle component 412 may be made ofmetal, such as stainless steel. In one specific embodiment, the ceramicmaterial may be a monolithic piece that may be integrated into thesecond nozzle component 412.

In another embodiment, the nozzle assembly may include a gas supplymanifold having at least one gas supply conduit (e.g., gas line 408)that may be in fluid communication with a first nozzle component 410 ofthe nozzle assembly. The first nozzle component may include a firstportion of at least one conical nozzle (e.g., first conical cavity 506)is formed that extends from a nozzle throat (e.g, orifice 502) at afirst entry surface 504 to an intermediate exit at a first exit surface514. A second nozzle component 412 of the nozzle assembly may beadjacent to the first nozzle component 410. The second nozzle component412 may include at least one conical nozzle (e.g., second conical cavity508) that extends from an intermediate inlet at a second entry surface516 to a nozzle exit at a second exit surface 518. The second nozzlecomponent 412 further including a re-entrant cavity into which the firstnozzle component 410 may be inserted, such that the first exit surface514 interfaces with or touches the second entry surface 516. There-entrant cavity may be designed to align the first conical cavity withthe second conical cavity 508 to enable the desired transition of theGCIB between the two components, such that a centerline of said firstnozzle portion coincides or aligns with a centerline of said secondnozzle portion.

In one embodiment, a diameter of said intermediate exit at said firstexit surface of said first nozzle component may be equal to or less thana diameter of said intermediate inlet at said second entry surface ofsaid second nozzle component.

In another embodiment, the diameter of said intermediate exit of saidfirst nozzle component ranges from about 50% to about 100% of thediameter of said intermediate inlet of said second nozzle component.

The nozzle assembly may also include a sealing member 520 disposedbetween said first nozzle component 410 and the gas supply manifold 406such that when the second nozzle component 411 is attached or joined tothe gas supply manifold 406 the first entry surface 504 may create aseal (e.g., fluid flow barrier) surrounding an outlet of at least onegas supply conduit 406. In one embodiment, the sealing member mayinclude a sealer, an O-ring, or an elastomer that forms or enables theseal or fluid flow barrier.

In another embodiment, the nozzle assembly may include a pair of nozzlesarranged parallel to and adjacent with one another as shown in FIG. 5.

FIG. 6 includes a cross-section illustration 600 of a transition region(e.g., flat transition region T) between two nozzles (e.g., first nozzlecomponent 410, second nozzle component 412) in the nozzle device 500 forthe GCIB processing system. In one embodiment, the flat transitionregion 512 or continuation nozzle may be cylindrical in shape, such thatthe diameter of the flat transition region 512 may be constant orsubstantially constant along a distance 604 that may be less than 5 mm.In this embodiment, the diameter of the flat transition region 512 maybe larger than the diameter of any portion of the first conical cavity410 at the first exist surface 516. In this instance, a step height 602between the first conical cavity 410 and the flat transition region 512may exist. In one embodiment, the transition region 512 may be no morethan 10 mm in length. The step height 602 may be less than 1 mm. In onespecific embodiment, the step height 602 may be about 0.04 mm.

An apparatus and method for incorporating a nozzle/skimmer module into aGCIB system is disclosed in various embodiments. However, one skilled inthe relevant art will recognize that the various embodiments may bepracticed without one or more of the specific details, or with otherreplacement and/or additional methods, materials, or components. Inother instances, well-known structures, materials, or operations are notshown or described in detail to avoid obscuring aspects of variousembodiments of the invention. Similarly, for purposes of explanation,specific numbers, materials, and configurations are set forth in orderto provide a thorough understanding of the invention. Nevertheless, theinvention may be practiced without specific details. Furthermore, it isunderstood that the various embodiments shown in the figures areillustrative representations and are not necessarily drawn to scale.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, material, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the invention, but do not denote that theyare present in every embodiment. Thus, the appearances of the phrases“in one embodiment” or “in an embodiment” in various places throughoutthis specification are not necessarily referring to the same embodimentof the invention. Furthermore, the particular features, structures,materials, or characteristics may be combined in any suitable manner inone or more embodiments. Various additional layers and/or structures maybe included and/or described features may be omitted in otherembodiments.

Various operations may have been described as multiple discreteoperations in turn, in a manner that is most helpful in understandingthe invention. However, the order of description should not be construedas to imply that these operations are necessarily order dependent. Inparticular, these operations need not be performed in the order ofpresentation. Operations described may be performed in a different orderthan the described embodiment. Various additional operations may beperformed and/or described operations may be omitted in additionalembodiments.

The foregoing description of the embodiments of the invention has beenpresented for the purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formsdisclosed. This description and the claims following include terms, suchas left, right, top, bottom, over, under, upper, lower, first, second,etc. that are used for descriptive purposes only and are not to beconstrued as limiting. For example, terms designating relative verticalposition refer to a situation where a device side (or active surface) ofa substrate or integrated circuit is the “top” surface of thatsubstrate; the substrate may actually be in any orientation so that a“top” side of a substrate may be lower than the “bottom” side in astandard terrestrial frame of reference and still fall within themeaning of the term “top.” The term “on” as used herein (including inthe claims) does not indicate that a first layer “on” a second layer isdirectly on and in immediate contact with the second layer unless suchis specifically stated; there may be a third layer or other structurebetween the first layer and the second layer on the first layer. Theembodiments of a device or article described herein can be manufactured,used, or shipped in a number of positions and orientations.

Persons skilled in the relevant art can appreciate that manymodifications and variations are possible in light of the aboveteaching. Persons skilled in the art will recognize various equivalentcombinations and substitutions for various components shown in theFigures. It is therefore intended that the scope of the invention belimited not by this detailed description, but rather by the claimsappended hereto.

What is claimed is:
 1. A nozzle assembly for use in a gas cluster beam(GCB) processing system, comprising: a gas supply manifold having atleast one gas supply conduit; a first nozzle component through which afirst portion of at least one conical nozzle is formed that extends froma nozzle throat at a first entry surface to an intermediate exit at afirst exit surface; a second nozzle component through which a secondportion of said at least one conical nozzle extends from an intermediateinlet at a second entry surface to a nozzle exit at a second exitsurface, said second nozzle component further including a re-entrantcavity into which said first nozzle component inserts such that saidfirst exit surface mates with said second entry surface, and said firstnozzle portion aligns with said second nozzle portion to form saidconical nozzle; and a sealing member disposed between said first nozzlecomponent and said gas supply manifold such that when said second nozzlecomponent is attached to said gas supply manifold, said first entrysurface of said first nozzle component presses against said sealingmember and creates a seal with said gas supply manifold surrounding anoutlet of said at least one gas supply conduit.
 2. The assembly of claim1, wherein said first nozzle component is a monolithic piece composed ofceramic.
 3. The assembly of claim 1, wherein said second nozzlecomponent is composed of stainless steel.
 4. The assembly of claim 1,wherein said at least one conical nozzle comprises a pair of nozzlesarranged parallel to and adjacent with one another.
 5. The assembly ofclaim 1, wherein a centerline of said first nozzle portion coincideswith a centerline of said second nozzle portion.
 6. The assembly ofclaim 1, wherein a diameter of said intermediate exit at said first exitsurface of said first nozzle component is equal to or less than adiameter of said intermediate inlet at said second entry surface of saidsecond nozzle component.
 7. The assembly of claim 1, wherein a diameterof said intermediate exit at said first exit surface of said firstnozzle component is less than a diameter of said intermediate inlet atsaid second entry surface of said second nozzle component.
 8. Theassembly of claim 7, where the diameter of said intermediate exit ofsaid first nozzle component ranges from about 50% to about 100% of thediameter of said intermediate inlet of said second nozzle component. 9.A nozzle assembly for use in a gas cluster beam (GCB) processing system,comprising: a nozzle component comprising: at least one conical nozzle;and a nozzle throat disposed proximate to one end of said at least oneconical nozzle that can receive gas from a gas supply conduit; are-entrant cavity component comprising: a cavity that houses said nozzlecomponent; a first opening of said cavity that can receive said nozzlecomponent or said gas; a second opening of said cavity that is oppositesaid first opening and that can receive said gas from said at least oneconical nozzle; and a continuation nozzle comprising a conical cavitythat is aligned with said at least one conical nozzle and can receivesaid gas from said at least one conical nozzle via said second opening,the conical cavity comprising an entrance diameter that is larger thanany diameter of said at least one conical nozzle.
 10. The assembly ofclaim 9, wherein said re-entrant cavity further comprises a transitioncavity disposed between said second opening and said continuationnozzle, said transition cavity comprises: a substantially cylindricalshape comprising an offset length that said gas flows through from saidsecond opening to said continuation nozzle; a diameter that is greaterthan any diameter along said at least one conical nozzle.
 11. The deviceof claim 10, wherein the diameter of the transition cavity comprises adifference of no more than 1 mm than a diameter of one end of said atleast one conical nozzle that is adjacent to the transition cavity. 12.The device of claim 11, wherein the offset length comprises a distanceof no more than 10 mm.
 13. The assembly of claim 9, further comprising asealing member disposed between said nozzle component and said gassupply conduit.
 14. The assembly of claim 9, wherein said at least oneconical nozzle comprises a pair of nozzles arranged parallel to andadjacent with one another.
 15. The assembly of claim 14, wherein saidre-entrant cavity comprises a third opening of said cavity that isadjacent to the second opening and aligned with one of the pair ofnozzles.
 16. The assembly of claim 9, wherein said at least one conicalnozzle is characterized by a half angle ranging from about 1.5 to about30.0 degrees.
 17. The assembly of claim 9, wherein the ratio of a lengthof said nozzle component length to total length of said conical nozzleand said continuation nozzle is in a range from 0.40 to 0.99.
 18. Theassembly of claim 9, wherein the nozzle throat is in a range from 25 μmto 500 μm.
 19. The assembly of claim 9, wherein two or more nozzles areconfigured to generate a target GCB current.
 20. The assembly of claim9, wherein said at least one conical nozzle and said continuation nozzlecomprise a total length ranging from about 20 mm to about 60 mm.